Radiation Sensor - BG51-OEM
• Low weight (2,2g)
• New: Ultra low power requirement (25µA)
• Pulse Rate vs. Radiation Rate: 5 cpm/µSv/h
• High immunity to RF and electrostatic fields
• Linear response over wide temperature range (-30℃ to 60℃)
• Swiss made
- Quantity:
- - +
Product Specification
Description
The function of the BG51-OEM radiation sensor is based on an array of customized PIN diodes. The integrated pulse discriminator with a temperature compensated threshold level provides true CMOS/TTL signal output. The BG51-OEM is capable of detecting beta radiation (electrons), gamma radiation (photons) and X-rays.
The performance of the BG51-OEM solid state sensor, in combination with high immunity to electrostatic fields make it a good choice for new state-of-the-art designs as well as for upgrading existing designs.
Features and Benefits
• Low weight (2,2g)
• New: Ultra low power requirement (25µA)
• Pulse Rate vs. Radiation Rate: 5 cpm/µSv/h
• High immunity to RF and electrostatic fields
• Linear response over wide temperature range (-30℃ to 60℃)
• Swiss made
Application Areas
• CubeSats conducting scientific investigations in space
• Original Equipment Manufacturers (OEM)
• Equipment for detecting radioactivity in medical environment
• Radiation monitors for nuclear safeguards and security
• Gamma detector to detect illicit nuclear material
Absolute Maximum Ratings
Supply voltage, VCC to GND |
18.0V |
Output short-circuit current |
continuous |
Storage temperature range |
-65℃ to 100℃ |
Electrical characteristics
Unless otherwise indicated specified at:VCC = 4.0V, TA = 25℃ |
|
Measurement range of dose rate |
0.1 µSv/h to 100 mSv/h |
Pulse Rate vs. Radiation Rate |
5 cpm ± 15% for 1 µSv/h |
Energy response |
70 keV to 2 MeV |
Output pulse level Output pulse width |
Equal to supply voltage (positive going) 50 μs to 200 μs (LOW→HIGH→LOW) |
Supply voltage range, VCC Supply current, IS |
2.5V to 10.0V 25µA TYP |
Operating temperature range |
-30℃ to 60℃ |
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