UV-B Sensor - GUVB-T11GD-L

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-Chip size:1.4mm.TO 46 PKG
- Aluminium Gallium Nitride Based Material
- Schottky-type Photodiode
- Photovoltaic Mode Operation
- Good Visible Blindness
- High Responsivity & Low Dark Current
- Spectral Detection Range: 220~320nm
- Active area: 1.536mm2

Model Number: GUVB-T11GD-L
Data Sheet:

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Product Specification

1. UV Sensor GUVB-T11GD-L Features

Aluminium Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
Good Visible Blindness
High Responsivity & Low Dark Current

2. UV Sensor GUVB-T11GD-L Applications
UV-B Lamp Monitoring
UV-B LED Monitoring

3. UV Sensor GUVB-T11GD-L Outline Diagrams and Dimensions

4. UV Sensor GUVB-T11GD-L Absolute Maximum Ratings
Storage Temperature: -40~90℃
Operating Temperature: -30~85℃
Reverse Voltage: 3V
Forward Current: 1mA
Optical Source Power Range: 0.01µ~100m W/cm²
Soldering Temperature: 260℃

5. UV Sensor GUVB-T11GD-L Characteristics (at 25℃)
Dark Current(Max.): 20nA
Photo Current(Typ.): 1.5µA
Temperature Coefficient: 0.1%/℃
Responsivity: 0.13A/W
Spectral Detection Range: 220~320nm
Active area: 1.536mm²