UV-A Sensor - GUVV-S10SD
- Chip size 0.4mm,SMD 3528 PKG,
- Indium Gallium Nitride Based Material
- Schottky-type Photodiode
- Photovoltaic Mode Operation
- High Responsivity & Low Dark Current
- Spectral Detection Range: 240~395nm
- Dark Current(Max.): 1nA
- Model Number: GUVV-S10SD
- Data Sheet:
- Quantity:
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Product Specification
1. GUVV-S10SD UV Sensor Features
Indium Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
High Responsivity & Low Dark Curren
2. GUVV-S10SD UV Sensor Applications
UV-A Lamp Monitoring
3. GUVV-S10SD UV Sensor Outline Diagrams and Dimensions
4. GUVV-S10SD UV Sensor Absolute Maximum Ratings
Storage Temperature: -40~90℃
Operating Temperature: -30~85℃
Reverse Voltage: 2V
Forward Current: 1mA
Optical Source Power Range: 0.1~100000 µW/cm2
Soldering Temperature: 260℃
5. GUVV-S10SD UV Sensor Characteristics (at 25℃)
Dark Current(Max.): 1nA
Photo Current(Typ.): 181nA
Temperature Coefficient: 0.1%/℃
Responsivity: 0.18A/W
Spectral Detection Range: 240~395nm
Active area: 0.076mm2
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