UVC-only SiC Based UV Photodiode With Standard DVGW W294 - SG01S-C18
• UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability
• Active Area A = 0,06 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cm2 peak radiation results a current of approx. 720 nA
• Dark Current: 0.2 fA
• Capacitance: 15 pF
• Responsivity Range: 225 … 287 nm
- Model Number: SG01S-C18
- Data Sheet:
- Quantity:
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Product Specification
SG01S-C18
UVC-only SiC based UV photodiode A = 0.06 mm2
◆ SG01S-C18 UV Photodiode General Features
Properties of the SG01S-C18 UV Photodiode
• UVC-only sensitivity, compliant with DVGW W294, PTB reported high chip stability
• Active Area A = 0.06 mm2
• TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10mW/cm2 peak radiation results a current of approx. 720 nA
About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.
Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2. Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
◆ SG01S-C18 UV Photodiode Specifications
Parameter
Symbol
Value
Unit
Spectral Characteristics
Typical Responsivity at Peak Wavelength
Smax
0,120
AW-1
Wavelength of max. Spectral Responsivity
λmax
275
nm
Responsivity Range (S=0,1*Smax)
–
225 … 287
nm
Visible Blindness (Smax/S>405nm)
VB
> 1010
–
General Characteristics (T=25°C)
Active Area
A
0.06
mm2
Dark Current (1V reverse bias)
Id
0.2
fA
Capacitance
C
15
pF
Short Circuit (10mW/cm2 at peak)
Io
720
nA
Temperature Coefficient
Tc
< 0.1
%/K
Maximum Ratings
Operating Temperature
Topt
-55 … +170
°C
Storage Temperature
Tstor
-55 … +170
°C
Soldering Temperature (3s)
Tsold
260
°C
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