UV Sensor - GUVV-T10GD-L

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- Dark Current(Max.): 20nA
- Spectral Detection Range: 230~395nm
- Active area: 1.536mm2
- Chip size of 1.4mm; TO 46 PKG
- Indium Gallium Nitride Based Material
- Schottky-type Photodiode
- Photovoltaic Mode Operation
- High Responsivity & Low Dark Current

Model Number: GUVV-T10GD-L
Data Sheet:

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Product Specification

1. GUVV-T10GD-L UV Sensor Features

Indium Gallium Nitride Based Material
Schottky-type Photodiode
Photovoltaic Mode Operation
High Responsivity & Low Dark Current

2. GUVV-T10GD-L UV Sensor Applications

Full UV Band Monitoring
UV-A Lamp Monitoring
Sterilization Lamp Monitoring

3. GUVV-T10GD-L UV Sensor Outline Diagrams and Dimensions

4. GUVV-T10GD-L UV Sensor Absolute Maximum Ratings
Storage Temperature: -40~90℃
Operating Temperature: -30~85℃
Reverse Voltage: 2V
Forward Current: 1mA
Optical Source Power Range: 0.01µ~100m W/cm²
Soldering Temperature: 260℃

5. GUVV-T10GD-L UV Sensor Characteristics (at 25℃)
Dark Current(Max.): 20nA
Photo Current(Typ.): 2.6µA
Temperature Coefficient: 0.1%/℃
Responsivity: 0.13A/W
Spectral Detection Range: 230~395nm
Active area: 1.536mm²