UV-A Sensor - GUVV-T10GD

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- Chip size: 0.4mm;TO 46 PKG
- Dark Current(Max.): 1nA
- Spectral Detection Range: 230~395nm
- Active area: 0.076mm2
- Indium Gallium Nitride Based Material
- Schottky-type Photodiode
- Photovoltaic Mode Operation
- High Responsivity & Low Dark Current

Model Number: GUVV-T10GD
Data Sheet:

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Product Specification

1. GUVV-T10GD UV Sensor Features

Indium Gallium Nitride Based Material

Schottky-type Photodiode

Photovoltaic Mode Operation

High Responsivity & Low Dark Current

2. GUVV-T10GD UV Sensor Applications

Full UV Band Monitoring

UV-A Lamp Monitoring

Sterilization Lamp Monitoring

3. GUVV-T10GD UV Sensor Outline Diagrams and Dimensions

4. GUVV-T10GD UV Sensor Absolute Maximum Ratings

Storage Temperature: -40~90℃
Operating Temperature: -30~85℃
Reverse Voltage: 2V
Forward Current: 1mA
Optical Source Power Range: 0.1µ~100m W/cm²
Soldering Temperature: 260℃

5. UV Sensor GUVV-T10GD Characteristics (at 25℃)
Dark Current(Max.): 1nA
Photo Current(Typ.): 163nA
Temperature Coefficient: 0.1%/℃
Responsivity: 0.12A/W
Spectral Detection Range: 230~395nm
Active area: 0.076mm²