SiC-based UV Photodiode - ST-ABC-L

  • SiC-based UV Photodiode
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• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• High responsivity and low dark current
• Operation temperature range: -25 - 200°C
• Chip size: 1 mm2
• Dark current: <0.1nA
• Peak responsivisity: 0.097A/W

  • Model Number: ST-ABC-L
  • Data Sheet: Date Sheet File
Quantity:
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Product Specification

ST-ABC-L UV Photodiode General Features:
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current

ST-ABC-L UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection

ST-ABC-L UV Photodiode Specifications:

Parameters
Symbol
Value
Unit
Maximum ratings

Operation temperature range
Topt
-25 - 200
°C
Storage temperature range
Tsto
-40 - 120
°C
Soldering temperature (3 s)
Tsol
260
°C
Reverse voltage
Vr-max
-20 
V
General characteristics (25°C)

Chip size
A
1
mm2
Dark current (Vr = -5 V)
Id
<0.1
nA
Temperature coefficient
Tc
0.1
%/°C
Capacitance (at 0 V and 1 MHz)
Cp 97 pF
Spectral response characteristics (25°C)

Wavelength of peak responsivisity
λp
275
nm
Peak responsivisity (at 275 nm)
Rmax
0.097
A/W
Spectral response range (R=0.1×Rmax)
- 220-350
nm
UV-visible rejection ratio (Rmax/R400 nm)
- >104 -

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