GaN-based UV Photodiode - GT-ABC-L

  • GaN-based UV Photodiode
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• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current

  • Model Number: GT-ABC-L
  • Data Sheet: Date Sheet File
Quantity:
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Product Specification

GT-ABC-L GaN-based UV Photodiode General Features:
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current

GT-ABC-L GaN-based UV Photodiode Applications: 
UV index monitoring, UV radiation dose measurement, flame detection

GT-ABC-L GaN-based UV Photodiode Specifications:

Parameters
Symbol
Value
Unit
Maximum ratings

Operation temperature range
Topt
-25 - 85
°C
Storage temperature range
Tsto
-40 - 85
°C
Soldering temperature (3 s)
Tsol
260
°C
Reverse voltage
Vr-max
-10 
V
General characteristics (25°C)

Chip size
A
1
mm2
Dark current (Vr = -5 V)
Id
<1
nA
Temperature coefficient
Tc
-0.02
%/°C
Capacitance (at 0 V and 1 MHz)
Cp 18 pF
Spectral response characteristics (25°C)

Wavelength of peak responsivisity
λp
355
nm
Peak responsivisity (at 275 nm)
Rmax
0.20
A/W
Spectral response range (R=0.1×Rmax)
- 300-370
nm
UV-visible rejection ratio (Rmax/R400 nm)
- >104 -

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