GaN-based UV Photodiode - GT-ABC-L
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current
- Quantity:
- - +
Product Specification
GT-ABC-L GaN-based UV Photodiode General Features:
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current
GT-ABC-L GaN-based UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection
GT-ABC-L GaN-based UV Photodiode Specifications:
Parameters |
Symbol |
Value |
Unit |
Maximum ratings |
|
||
Operation temperature range |
Topt |
-25 - 85 |
°C |
Storage temperature range |
Tsto |
-40 - 85 |
°C |
Soldering temperature (3 s) |
Tsol |
260 |
°C |
Reverse voltage |
Vr-max |
-10 |
V |
General characteristics (25°C) |
|
||
Chip size |
A |
1 |
mm2 |
Dark current (Vr = -5 V) |
Id |
<1 |
nA |
Temperature coefficient |
Tc |
-0.02 |
%/°C |
Capacitance (at 0 V and 1 MHz) |
Cp | 18 |
pF |
Spectral response characteristics (25°C) |
|
||
Wavelength of peak responsivisity |
λp |
355 |
nm |
Peak responsivisity (at 275 nm) |
Rmax |
0.20 |
A/W |
Spectral response range (R=0.1×Rmax) |
- |
300-370 |
nm |
UV-visible rejection ratio (Rmax/R400 nm) |
- | >104 | - |
If you cannot find what you want, you can entrust OFweek to source for you. Just click:
Sourcing Service