GaN-based UV Photodiode - GS-ABC-2016S
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• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• SMD 2016 package
• Good visible blindness
• High responsivity and low dark current
- Model Number: GS-ABC-2016S
- Data Sheet:
- Quantity:
- - +
Product Specification
GS-ABC-2016S UV Photodiode General Features:
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• SMD 2016 package
• Good visible blindness
• High responsivity and low dark current
GS-ABC-2016S UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection
GS-ABC-2016S UV Photodiode Specifications:
|
Parameters |
Symbol |
Value |
Unit |
|
Maximum ratings |
|||
|
Operation temperature range |
Topt |
-25 - 85 |
°C |
|
Storage temperature range |
Tsto |
-40 - 85 |
°C |
|
Soldering temperature (3 s) |
Tsol |
260 |
°C |
|
Reverse voltage |
Vr-max |
-10 |
V |
|
General characteristics (25°C) |
|
||
|
Chip size |
A |
0.11 |
mm2 |
|
Dark current (Vr = -1 V) |
Id |
<1 |
nA |
|
Temperature coefficient |
Tc |
-0.02 |
%/°C |
|
Capacitance (at 0 V and 1 MHz) |
Cp |
3.8 |
pF |
|
Spectral response characteristics (25°C) |
|||
|
Wavelength of peak responsivisity |
λp |
355 | nm |
|
Peak responsivisity (at 355 nm) |
Rmax |
0.20 |
A/W |
|
Spectral response range (R=0.1×Rmax) |
- |
210 - 370 |
nm |
|
UV-visible rejection ratio (Rmax/R400 nm) |
- |
>104 |
- |
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