GaN-based UV Photodiode - GS-AB-0603E
• UVA+UVB photodiode
• Photovoltaic mode operation
• SMD 0603 package
• Good visible blindness
• High responsivity and low dark current
- Model Number: GS-AB-0603E
- Data Sheet:
- Quantity:
- - +
Product Specification
GS-AB-0603E GaN-based UV Photodiode General Features:
• UVA+UVB photodiode
• Photovoltaic mode operation
• SMD 0603 package
• Good visible blindness
• High responsivity and low dark current
GS-AB-0603E GaN-based UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection
GS-AB-0603E GaN-based UV Photodiode Specifications:
Parameters
Symbol
Value
Unit
Maximum ratings
Operation temperature range
Topt
-25 - 85
°C
Storage temperature range
Tsto
-40 - 85
°C
Soldering temperature (3 s)
Tsol
260
°C
Reverse voltage
Vr-max
-10
V
General characteristics (25°C)
Chip size
A
0.09
mm2
Dark current (Vr = -5 V)
Id
<1
nA
Temperature coefficient
Tc
-0.02
%/°C
Capacitance (at 0 V and 1 MHz)
Cp
2.3
pF
Spectral response characteristics (25°C)
Wavelength of peak responsivisity
λp
355
nm
Peak responsivisity (at 275 nm)
Rmax
0.20
A/W
Spectral response range (R=0.1×Rmax)
-
300-370
nm
UV-visible rejection ratio (Rmax/R400 nm)
-
>104
-
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