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Broadband SiC Based UV Photodiode A = 36 mm2 - SG01XXL-8ISO90

  • Broadband SiC Based UV Photodiode A = 36 mm2
  • Broadband SiC Based UV Photodiode A = 36 mm2
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• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 36 mm2
• TO8 hermetically sealed metal housing, two isolated pins in a circle
• 10µW/cm2 peak radiation results a current of approx. 468 nA
• Dark Current: 120 fA
• Capacitance: 9000 pF
• Responsivity Range: 221 … 358 nm

  • Model Number: SG01XXL-8ISO90
  • Data Sheet: Date Sheet File
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Product Specification

SG01XXL-8ISO90
Broadband SiC based UV photodiode A = 36 mm2


◆ SG01XXL-8ISO90 UV Photodiode General features


Properties of the SG01XXL-8ISO90 UV photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 36 mm2
• TO8 hermetically sealed metal housing, two isolated pins in a circle
• 10µW/cm2 peak radiation results a current of approx. 468 nA


About the material Silicon Carbide (SiC)

SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low, < 0.1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. 


Options

SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 . Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


◆ SG01XXL-8ISO90 UV Photodiode Specifications

Parameter Symbol Value Unit
Spectral Characteristics
Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) – 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010 –
General Characteristics (T=25°C)
Active Area A 36 mm2
Dark Current (1V reverse bias) Id 120 fA
Capacitance C 9000 pF
Short Circuit (10µW/cm2 at peak) Io 468 nA
Temperature Coefficient Tc < 0.1 %/K
Maximum Ratings
Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V

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