Broadband SiC Based UV Photodiode A = 1.0 mm2 - SG01L-18ISO90

  • Broadband SiC Based UV Photodiode A = 1.0 mm2
  • Broadband SiC Based UV Photodiode A = 1.0 mm2
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• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 1.0 mm2
• TO18 hermetically sealed metal housing, short cap, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 13 nA
• Dark Current: 3.3 fA
• Capacitance: 250 pF
• Responsivity Range: 221 … 358 nm

  • Model Number: SG01L-18ISO90
  • Data Sheet: Date Sheet File
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Product Specification

SG01L-18ISO90

Broadband SiC based UV photodiode A = 1.0 mm2


SG01L-18ISO90 UV Photodiode General Features


Properties of the SG01L-18ISO90 UV Photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability
• Active Area A = 1.0 mm2
• TO18 hermetically sealed metal housing, two isolated pins in a circle
• 10µW/cm2 peak radiation results a current of approx. 13 nA


About the material Silicon Carbide (SiC)
SiC provides  the unique property of  extreme  radiation hardness, near-perfect  visible blindness,  low dark  current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity)  is also  low, < 0.1%/K. Because of the  low noise (dark current  in the fA range), very  low UV radiation intensities can be measured reliably. 


Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).


SG01L-18ISO90 UV Photodiode Specifications

Parameter Symbol Value Unit
Spectral Characteristics
Typical Responsivity at Peak Wavelength Smax 0.130 AW-1
Wavelength of max. Spectral Responsivity λmax 280 nm
Responsivity Range (S=0.1*Smax) 221 … 358 nm
Visible Blindness (Smax/S>405nm) VB > 1010
General Characteristics (T=25°C)
Active Area A 1.0 mm2
Dark Current (1V reverse bias) Id 3.3 fA
Capacitance C 250 pF
Short Circuit (10µW/cm2 at peak) Io 13 nA
Temperature Coefficient Tc < 0.1 %/K
Maximum Ratings
Operating Temperature Topt -55 … +170 °C
Storage Temperature Tstor -55 … +170 °C
Soldering Temperature (3s) Tsold 260 °C
Reverse Voltage VRmax 20 V

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