• Honeywell AlGaAs Infrared Emitting Diode
Mouse over image to zoom

Honeywell AlGaAs Infrared Emitting Diode

ISweek online 2h ago

ISweek_com

Send Inquiry Chat Now

  • Price

    Price on request   ≥1piece

  • Model Number

    SE2470

  • Data Sheet

  • Package

    Original packaging

  • Specs

    SE2470

  • Quantity

    - +

  • Send Inquiry

Product Description

Honeywell AlGaAs Infrared Emitting Diode - SE2470

 

Description
The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current.

 

Features
● Miniature, hermetically sealed, pill style, metal can package
● 18° (nominal) beam angle
● Wide operating temperature range (- 55 ℃ to +125 ℃)
● Higher power output than GaAs at equivalent drive currents
● Ideal for direct mounting to printed circuit boards
● 880 nm wavelength
● Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington

 

ABSOLUTE MAXIMUM RATINGS (25 ℃ Free-Air Temperature unless otherwise noted)
Continuous Forward Current: 75 mA
Power Dissipation: 125 mW
Operating Temperature Range: -55 ℃ to 125 ℃
Storage Temperature Range: -65 ℃ to 150 ℃
Soldering Temperature (10 sec): 260 ℃