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GaN-based UV Photodiode
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Price
Price on request ≥1piece
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Model Number
GT-ABC-L -
Data Sheet
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Package
Original packaging -
Specs
GT-ABC-L -
Quantity
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Product Description
GT-ABC-L GaN-based UV Photodiode General Features:
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current
GT-ABC-L GaN-based UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection
GT-ABC-L GaN-based UV Photodiode Specifications:
• Broad band UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• TO-46 metal housing
• Good visible blindness
• High responsivity and low dark current
GT-ABC-L GaN-based UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection
GT-ABC-L GaN-based UV Photodiode Specifications:
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Parameters |
Symbol |
Value |
Unit |
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Maximum ratings |
|
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Operation temperature range |
Topt |
-25 - 85 |
°C |
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Storage temperature range |
Tsto |
-40 - 85 |
°C |
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Soldering temperature (3 s) |
Tsol |
260 |
°C |
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Reverse voltage |
Vr-max |
-10 |
V |
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General characteristics (25°C) |
|
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Chip size |
A |
1 |
mm2 |
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Dark current (Vr = -5 V) |
Id |
<1 |
nA |
|
Temperature coefficient |
Tc |
-0.02 |
%/°C |
|
Capacitance (at 0 V and 1 MHz) |
Cp | 18 |
pF |
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Spectral response characteristics (25°C) |
|
||
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Wavelength of peak responsivisity |
λp |
355 |
nm |
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Peak responsivisity (at 275 nm) |
Rmax |
0.20 |
A/W |
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Spectral response range (R=0.1×Rmax) |
- |
300-370 |
nm |
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UV-visible rejection ratio (Rmax/R400 nm) |
- | >104 | - |