UV photodiode - GT-UVV-LW

  • UV photodiode
  • UV photodiode
Mouse over image to zoom

• ​Indium Gallium Nitride Based Material
• ​Photovoltaic mode operation
• ​TO-46 metal housing
• ​High responsivity and low dark current

  • Model Number: GT-UVV-LW
  • Data Sheet: Date Sheet File
Quantity:
- +

Product Specification

1.UV photodiodeGT-UVV-LWProduct info

Chip size 1 mm2, TO46 metal package with sapphire window, high sensitivity and low leakage, spectral response range 350-440 nm.   

 

2.UV photodiodeGT-UVV-LWTypical applications

UV LED Monitoring, UV radiation dose measurement, UV Curing

 

3.UV photodiodeGT-UVV-LWGeneral Features

• Indium Gallium Nitride Based Material

• Photovoltaic mode operation

• TO-46 metal housing

• High responsivity and low dark current

 

4. UV photodiodeGT-UVV-LWSpecifications

Parameters

Symbol

Value

Unit

Maximum ratings

Operation temperature range  

Topt

-25-85

Storage temperature range  

Tsto

-40-85

Soldering temperature (3 s)

Tsol

260

Reverse voltage   

Vr-max

-10

V

General characteristics (25)

Chip size

A

1

mm2

Dark current (Vr = -1 V)  

Id

<1

nA

Temperature coefficient  

Tc

 0.05

%/

Capacitance (at 0 V and 1 MHz)

Cp

60

pF

Spectral response characteristics (25)

Wavelength of peak responsivisity  

λp

390

nm

Peak responsivisity (at 390 nm)   

Rmax

0.289

A/W

Spectral response range (R=0.1×Rmax)

290-440

nm

UV-visible rejection ratio (Rmax/R400 nm)

>104

 

5.UV photodiodeGT-UVV-LWPackage dimensions: 


If you cannot find what you want, you can entrust OFweek to source for you. Just click:

Sourcing Service