Hermetic Infrared Emitting Diode

Description:

Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared emitting diode (GaAs), mounted in a miniature hermetically sealed “pill” package with an enhanced temperature range and a high power output.

These devices are designed for direct mounting to PCBoards.

Each OP223 and OP224 device is an 890 nm gallium aluminum arsenide infrared emitting diode (GaAIAs), mounted in a hermetically sealed “pill” package with an enhanced temperature range and a narrow irradiance pattern that provides high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size permits high device density mounting.

All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices.

Features:

• Hermetically sealed package

• Mechanically and spectrally matched to other OPTEK devices

• Designed for direct mount to PCBoard

Applications:

• Non-contact reflective object sensor

• Assembly line automation

• Machine automation

• Machine safety

• End of travel sensor

• Door sensor

Electrical Specifications:

Absolute Maximum Ratings (T_A = 25℃ unless otherwise noted)

Electrical Characteristics (T_A = 25℃ unless otherwise noted)

Notes:

1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.

2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.

3. Derate linearly 1.50 mW/℃ above 25℃.

4. For OP123, OP124, OP223 and OP224, EE(APT) is a measurement using a 0.031” (0.787 mm) diameter apertured sensor placed 0.50” (12.7 mm) from the measuring surface. EE(APT) is not necessarily uniform within the measured area.